(China (Mainland))
Product Summary
The FM18W08-SG is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. The FM18W08-SG provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FM18W08-SG superior to other types of nonvolatile memory.
Parametrics
FM18W08-SG absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +7.0V; (3)and VIN < VDD+1.0V; (4)TSTG, Storage Temperature: -55℃ to + 125℃; (5)TLEAD, Lead Temperature (Soldering, 10 seconds) 260℃; (6)VESD, Electrostatic Discharge Voltage: Human Body Model (AEC-Q100-002 Rev. E): 4kV, Charged Device Model (AEC-Q100-011 Rev. B): 1.25kV, Machine Model (AEC-Q100-003 Rev. E): 300 V.
Features
FM18W08-SG features: (1)256Kbit Ferroelectric Nonvolatile RAM: Organized as 32,768 x 8 bits, High Endurance 100 Trillion (1014) Read/Writes, 38 year Data Retention, NoDelay Writes, Advanced High-Reliability Ferroelectric Process; (2)Superior to BBSRAM Modules: No Battery Concerns, Monolithic Reliability, True Surface Mount Solution, No Rework Steps, Superior for Moisture, Shock, and Vibration, Resistant to Negative Voltage Undershoots; (3)SRAM & EEPROM Compatible: JEDEC 32Kx8 SRAM & EEPROM pinout, 70 ns Access Time, 130 ns Cycle Time.
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/2012103025236204.jpg">
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 FM18W08-SG |
Ramtron |
F-RAM Parallel FRAM 256k 3-5V |
Data Sheet |
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FM18W08-SGTR |
Ramtron |
F-RAM Parallel FRAM 256k 3-5V |
Data Sheet |
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